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Diffstat (limited to 'c/src/lib/libbsp/arm/tms570/hwinit/init_emif_sdram.c')
-rw-r--r--c/src/lib/libbsp/arm/tms570/hwinit/init_emif_sdram.c64
1 files changed, 0 insertions, 64 deletions
diff --git a/c/src/lib/libbsp/arm/tms570/hwinit/init_emif_sdram.c b/c/src/lib/libbsp/arm/tms570/hwinit/init_emif_sdram.c
deleted file mode 100644
index b07498024a..0000000000
--- a/c/src/lib/libbsp/arm/tms570/hwinit/init_emif_sdram.c
+++ /dev/null
@@ -1,64 +0,0 @@
-/**
- * @file init_emif_sdram.c
- *
- * @ingroup tms570
- *
- * @brief Initialization of external memory/SDRAM interface.
- */
-
-#include <stdint.h>
-#include <bsp/tms570.h>
-#include "tms570_hwinit.h"
-
-void tms570_emif_sdram_init( void )
-{
- uint32_t dummy;
- uint32_t sdtimr = 0;
- uint32_t sdcr = 0;
-
- /* Do not run attempt to initialize SDRAM when code is running from it */
- if ( ( (void*)tms570_emif_sdram_init >= (void*)TMS570_SDRAM_START_PTR ) &&
- ( (void*)tms570_emif_sdram_init <= (void*)TMS570_SDRAM_WINDOW_END_PTR ) )
- return;
-
- sdtimr = TMS570_EMIF_SDTIMR_T_RFC_SET( sdtimr, 6 - 1 );
- sdtimr = TMS570_EMIF_SDTIMR_T_RP_SET( sdtimr, 2 - 1 );
- sdtimr = TMS570_EMIF_SDTIMR_T_RCD_SET( sdtimr, 2 - 1 );
- sdtimr = TMS570_EMIF_SDTIMR_T_WR_SET( sdtimr, 2 - 1 );
- sdtimr = TMS570_EMIF_SDTIMR_T_RAS_SET( sdtimr, 4 - 1 );
- sdtimr = TMS570_EMIF_SDTIMR_T_RC_SET( sdtimr, 6 - 1 );
- sdtimr = TMS570_EMIF_SDTIMR_T_RRD_SET( sdtimr, 2 - 1 );
-
- TMS570_EMIF.SDTIMR = sdtimr;
-
- /* Minimum number of ECLKOUT cycles from Self-Refresh exit to any command */
- TMS570_EMIF.SDSRETR = 5;
- /* Define the SDRAM refresh period in terms of EMIF_CLK cycles. */
- TMS570_EMIF.SDRCR = 2000;
-
- /* SR - Self-Refresh mode bit. */
- sdcr |= TMS570_EMIF_SDCR_SR * 0;
- /* field: PD - Power Down bit controls entering and exiting of the power-down mode. */
- sdcr |= TMS570_EMIF_SDCR_PD * 0;
- /* PDWR - Perform refreshes during power down. */
- sdcr |= TMS570_EMIF_SDCR_PDWR * 0;
- /* NM - Narrow mode bit defines whether SDRAM is 16- or 32-bit-wide */
- sdcr |= TMS570_EMIF_SDCR_NM * 1;
- /* CL - CAS Latency. */
- sdcr = TMS570_EMIF_SDCR_CL_SET( sdcr, 2 );
- /* CL can only be written if BIT11_9LOCK is simultaneously written with a 1. */
- sdcr |= TMS570_EMIF_SDCR_BIT11_9LOCK * 1;
- /* IBANK - Internal SDRAM Bank size. */
- sdcr = TMS570_EMIF_SDCR_IBANK_SET( sdcr, 2 ); /* 4-banks device */
- /* Page Size. This field defines the internal page size of connected SDRAM devices. */
- sdcr = TMS570_EMIF_SDCR_PAGESIZE_SET( sdcr, 0 ); /* elements_256 */
-
- TMS570_EMIF.SDCR = sdcr;
-
- dummy = *(volatile uint32_t*)TMS570_SDRAM_START_PTR;
- (void) dummy;
- TMS570_EMIF.SDRCR = 31;
-
- /* Define the SDRAM refresh period in terms of EMIF_CLK cycles. */
- TMS570_EMIF.SDRCR = 312;
-}