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Diffstat (limited to 'c/src/lib/libbsp/arm/stm32f7x/hal/STM32F7xx_HAL_Driver/Src/stm32f7xx_hal_flash_ex.c')
| -rw-r--r-- | c/src/lib/libbsp/arm/stm32f7x/hal/STM32F7xx_HAL_Driver/Src/stm32f7xx_hal_flash_ex.c | 817 |
1 files changed, 0 insertions, 817 deletions
diff --git a/c/src/lib/libbsp/arm/stm32f7x/hal/STM32F7xx_HAL_Driver/Src/stm32f7xx_hal_flash_ex.c b/c/src/lib/libbsp/arm/stm32f7x/hal/STM32F7xx_HAL_Driver/Src/stm32f7xx_hal_flash_ex.c deleted file mode 100644 index 359f09eedd..0000000000 --- a/c/src/lib/libbsp/arm/stm32f7x/hal/STM32F7xx_HAL_Driver/Src/stm32f7xx_hal_flash_ex.c +++ /dev/null @@ -1,817 +0,0 @@ -/** - ****************************************************************************** - * @file stm32f7xx_hal_flash_ex.c - * @author MCD Application Team - * @version V1.0.1 - * @date 25-June-2015 - * @brief Extended FLASH HAL module driver. - * This file provides firmware functions to manage the following - * functionalities of the FLASH extension peripheral: - * + Extended programming operations functions - * - @verbatim - ============================================================================== - ##### Flash Extension features ##### - ============================================================================== - - [..] Comparing to other previous devices, the FLASH interface for STM32F727xx/437xx and - devices contains the following additional features - - (+) Capacity up to 2 Mbyte with dual bank architecture supporting read-while-write - capability (RWW) - (+) Dual bank memory organization - (+) PCROP protection for all banks - - ##### How to use this driver ##### - ============================================================================== - [..] This driver provides functions to configure and program the FLASH memory - of all STM32F7xx devices. It includes - (#) FLASH Memory Erase functions: - (++) Lock and Unlock the FLASH interface using HAL_FLASH_Unlock() and - HAL_FLASH_Lock() functions - (++) Erase function: Erase sector, erase all sectors - (++) There are two modes of erase : - (+++) Polling Mode using HAL_FLASHEx_Erase() - (+++) Interrupt Mode using HAL_FLASHEx_Erase_IT() - - (#) Option Bytes Programming functions: Use HAL_FLASHEx_OBProgram() to : - (++) Set/Reset the write protection - (++) Set the Read protection Level - (++) Set the BOR level - (++) Program the user Option Bytes - (#) Advanced Option Bytes Programming functions: Use HAL_FLASHEx_AdvOBProgram() to : - (++) Extended space (bank 2) erase function - (++) Full FLASH space (2 Mo) erase (bank 1 and bank 2) - (++) Dual Boot activation - (++) Write protection configuration for bank 2 - (++) PCROP protection configuration and control for both banks - - @endverbatim - ****************************************************************************** - * @attention - * - * <h2><center>© COPYRIGHT(c) 2015 STMicroelectronics</center></h2> - * - * Redistribution and use in source and binary forms, with or without modification, - * are permitted provided that the following conditions are met: - * 1. Redistributions of source code must retain the above copyright notice, - * this list of conditions and the following disclaimer. - * 2. Redistributions in binary form must reproduce the above copyright notice, - * this list of conditions and the following disclaimer in the documentation - * and/or other materials provided with the distribution. - * 3. Neither the name of STMicroelectronics nor the names of its contributors - * may be used to endorse or promote products derived from this software - * without specific prior written permission. - * - * THIS SOFTWARE IS PROVIDED BY THE COPYRIGHT HOLDERS AND CONTRIBUTORS "AS IS" - * AND ANY EXPRESS OR IMPLIED WARRANTIES, INCLUDING, BUT NOT LIMITED TO, THE - * IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE ARE - * DISCLAIMED. IN NO EVENT SHALL THE COPYRIGHT HOLDER OR CONTRIBUTORS BE LIABLE - * FOR ANY DIRECT, INDIRECT, INCIDENTAL, SPECIAL, EXEMPLARY, OR CONSEQUENTIAL - * DAMAGES (INCLUDING, BUT NOT LIMITED TO, PROCUREMENT OF SUBSTITUTE GOODS OR - * SERVICES; LOSS OF USE, DATA, OR PROFITS; OR BUSINESS INTERRUPTION) HOWEVER - * CAUSED AND ON ANY THEORY OF LIABILITY, WHETHER IN CONTRACT, STRICT LIABILITY, - * OR TORT (INCLUDING NEGLIGENCE OR OTHERWISE) ARISING IN ANY WAY OUT OF THE USE - * OF THIS SOFTWARE, EVEN IF ADVISED OF THE POSSIBILITY OF SUCH DAMAGE. - * - ****************************************************************************** - */ - -/* Includes ------------------------------------------------------------------*/ -#include "stm32f7xx_hal.h" - -/** @addtogroup STM32F7xx_HAL_Driver - * @{ - */ - -/** @defgroup FLASHEx FLASHEx - * @brief FLASH HAL Extension module driver - * @{ - */ - -#ifdef HAL_FLASH_MODULE_ENABLED - -/* Private typedef -----------------------------------------------------------*/ -/* Private define ------------------------------------------------------------*/ -/** @addtogroup FLASHEx_Private_Constants - * @{ - */ -#define SECTOR_MASK ((uint32_t)0xFFFFFF07) -#define FLASH_TIMEOUT_VALUE ((uint32_t)50000)/* 50 s */ -/** - * @} - */ - -/* Private macro -------------------------------------------------------------*/ -/* Private variables ---------------------------------------------------------*/ -/** @addtogroup FLASHEx_Private_Variables - * @{ - */ -extern FLASH_ProcessTypeDef pFlash; -/** - * @} - */ - -/* Private function prototypes -----------------------------------------------*/ -/** @addtogroup FLASHEx_Private_Functions - * @{ - */ -/* Option bytes control */ -static void FLASH_MassErase(uint8_t VoltageRange); -static HAL_StatusTypeDef FLASH_OB_EnableWRP(uint32_t WRPSector); -static HAL_StatusTypeDef FLASH_OB_DisableWRP(uint32_t WRPSector); -static HAL_StatusTypeDef FLASH_OB_RDP_LevelConfig(uint32_t Level); -static HAL_StatusTypeDef FLASH_OB_UserConfig(uint32_t Wwdg, uint32_t Iwdg, uint32_t Stop, uint32_t Stdby, uint32_t Iwdgstop, uint32_t Iwdgstdby); -static HAL_StatusTypeDef FLASH_OB_BOR_LevelConfig(uint8_t Level); -static HAL_StatusTypeDef FLASH_OB_BootAddressConfig(uint32_t BootOption, uint32_t Address); -static uint32_t FLASH_OB_GetUser(void); -static uint32_t FLASH_OB_GetWRP(void); -static uint8_t FLASH_OB_GetRDP(void); -static uint32_t FLASH_OB_GetBOR(void); -static uint32_t FLASH_OB_GetBootAddress(uint32_t BootOption); - -extern HAL_StatusTypeDef FLASH_WaitForLastOperation(uint32_t Timeout); -/** - * @} - */ - -/* Exported functions --------------------------------------------------------*/ -/** @defgroup FLASHEx_Exported_Functions FLASHEx Exported Functions - * @{ - */ - -/** @defgroup FLASHEx_Exported_Functions_Group1 Extended IO operation functions - * @brief Extended IO operation functions - * -@verbatim - =============================================================================== - ##### Extended programming operation functions ##### - =============================================================================== - [..] - This subsection provides a set of functions allowing to manage the Extension FLASH - programming operations Operations. - -@endverbatim - * @{ - */ -/** - * @brief Perform a mass erase or erase the specified FLASH memory sectors - * @param[in] pEraseInit: pointer to an FLASH_EraseInitTypeDef structure that - * contains the configuration information for the erasing. - * - * @param[out] SectorError: pointer to variable that - * contains the configuration information on faulty sector in case of error - * (0xFFFFFFFF means that all the sectors have been correctly erased) - * - * @retval HAL Status - */ -HAL_StatusTypeDef HAL_FLASHEx_Erase(FLASH_EraseInitTypeDef *pEraseInit, uint32_t *SectorError) -{ - HAL_StatusTypeDef status = HAL_ERROR; - uint32_t index = 0; - - /* Process Locked */ - __HAL_LOCK(&pFlash); - - /* Check the parameters */ - assert_param(IS_FLASH_TYPEERASE(pEraseInit->TypeErase)); - - /* Wait for last operation to be completed */ - status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); - - if(status == HAL_OK) - { - /*Initialization of SectorError variable*/ - *SectorError = 0xFFFFFFFF; - - if(pEraseInit->TypeErase == FLASH_TYPEERASE_MASSERASE) - { - /*Mass erase to be done*/ - FLASH_MassErase((uint8_t) pEraseInit->VoltageRange); - - /* Wait for last operation to be completed */ - status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); - - /* if the erase operation is completed, disable the MER Bit */ - FLASH->CR &= (~FLASH_MER_BIT); - } - else - { - /* Check the parameters */ - assert_param(IS_FLASH_NBSECTORS(pEraseInit->NbSectors + pEraseInit->Sector)); - - /* Erase by sector by sector to be done*/ - for(index = pEraseInit->Sector; index < (pEraseInit->NbSectors + pEraseInit->Sector); index++) - { - FLASH_Erase_Sector(index, (uint8_t) pEraseInit->VoltageRange); - - /* Wait for last operation to be completed */ - status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); - - /* If the erase operation is completed, disable the SER Bit */ - FLASH->CR &= (~FLASH_CR_SER); - FLASH->CR &= SECTOR_MASK; - - if(status != HAL_OK) - { - /* In case of error, stop erase procedure and return the faulty sector*/ - *SectorError = index; - break; - } - } - } - } - - /* Process Unlocked */ - __HAL_UNLOCK(&pFlash); - - return status; -} - -/** - * @brief Perform a mass erase or erase the specified FLASH memory sectors with interrupt enabled - * @param pEraseInit: pointer to an FLASH_EraseInitTypeDef structure that - * contains the configuration information for the erasing. - * - * @retval HAL Status - */ -HAL_StatusTypeDef HAL_FLASHEx_Erase_IT(FLASH_EraseInitTypeDef *pEraseInit) -{ - HAL_StatusTypeDef status = HAL_OK; - - /* Process Locked */ - __HAL_LOCK(&pFlash); - - /* Check the parameters */ - assert_param(IS_FLASH_TYPEERASE(pEraseInit->TypeErase)); - - /* Enable End of FLASH Operation interrupt */ - __HAL_FLASH_ENABLE_IT(FLASH_IT_EOP); - - /* Enable Error source interrupt */ - __HAL_FLASH_ENABLE_IT(FLASH_IT_ERR); - - /* Clear pending flags (if any) */ - __HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |\ - FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR| FLASH_FLAG_ERSERR); - - if(pEraseInit->TypeErase == FLASH_TYPEERASE_MASSERASE) - { - /*Mass erase to be done*/ - pFlash.ProcedureOnGoing = FLASH_PROC_MASSERASE; - FLASH_MassErase((uint8_t) pEraseInit->VoltageRange); - } - else - { - /* Erase by sector to be done*/ - - /* Check the parameters */ - assert_param(IS_FLASH_NBSECTORS(pEraseInit->NbSectors + pEraseInit->Sector)); - - pFlash.ProcedureOnGoing = FLASH_PROC_SECTERASE; - pFlash.NbSectorsToErase = pEraseInit->NbSectors; - pFlash.Sector = pEraseInit->Sector; - pFlash.VoltageForErase = (uint8_t)pEraseInit->VoltageRange; - - /*Erase 1st sector and wait for IT*/ - FLASH_Erase_Sector(pEraseInit->Sector, pEraseInit->VoltageRange); - } - - return status; -} - -/** - * @brief Program option bytes - * @param pOBInit: pointer to an FLASH_OBInitStruct structure that - * contains the configuration information for the programming. - * - * @retval HAL Status - */ -HAL_StatusTypeDef HAL_FLASHEx_OBProgram(FLASH_OBProgramInitTypeDef *pOBInit) -{ - HAL_StatusTypeDef status = HAL_ERROR; - - /* Process Locked */ - __HAL_LOCK(&pFlash); - - /* Check the parameters */ - assert_param(IS_OPTIONBYTE(pOBInit->OptionType)); - - /* Write protection configuration */ - if((pOBInit->OptionType & OPTIONBYTE_WRP) == OPTIONBYTE_WRP) - { - assert_param(IS_WRPSTATE(pOBInit->WRPState)); - if(pOBInit->WRPState == OB_WRPSTATE_ENABLE) - { - /*Enable of Write protection on the selected Sector*/ - status = FLASH_OB_EnableWRP(pOBInit->WRPSector); - } - else - { - /*Disable of Write protection on the selected Sector*/ - status = FLASH_OB_DisableWRP(pOBInit->WRPSector); - } - } - - /* Read protection configuration */ - if((pOBInit->OptionType & OPTIONBYTE_RDP) == OPTIONBYTE_RDP) - { - status = FLASH_OB_RDP_LevelConfig(pOBInit->RDPLevel); - } - - /* USER configuration */ - if((pOBInit->OptionType & OPTIONBYTE_USER) == OPTIONBYTE_USER) - { - status = FLASH_OB_UserConfig(pOBInit->USERConfig & OB_WWDG_SW, - pOBInit->USERConfig & OB_IWDG_SW, - pOBInit->USERConfig & OB_STOP_NO_RST, - pOBInit->USERConfig & OB_STDBY_NO_RST, - pOBInit->USERConfig & OB_IWDG_STOP_ACTIVE, - pOBInit->USERConfig & OB_IWDG_STDBY_ACTIVE); - } - - /* BOR Level configuration */ - if((pOBInit->OptionType & OPTIONBYTE_BOR) == OPTIONBYTE_BOR) - { - status = FLASH_OB_BOR_LevelConfig(pOBInit->BORLevel); - } - - /* Boot 0 Address configuration */ - if((pOBInit->OptionType & OPTIONBYTE_BOOTADDR_0) == OPTIONBYTE_BOOTADDR_0) - { - status = FLASH_OB_BootAddressConfig(OPTIONBYTE_BOOTADDR_0, pOBInit->BootAddr0); - } - - /* Boot 1 Address configuration */ - if((pOBInit->OptionType & OPTIONBYTE_BOOTADDR_1) == OPTIONBYTE_BOOTADDR_1) - { - status = FLASH_OB_BootAddressConfig(OPTIONBYTE_BOOTADDR_1, pOBInit->BootAddr1); - } - - /* Process Unlocked */ - __HAL_UNLOCK(&pFlash); - - return status; -} - -/** - * @brief Get the Option byte configuration - * @param pOBInit: pointer to an FLASH_OBInitStruct structure that - * contains the configuration information for the programming. - * - * @retval None - */ -void HAL_FLASHEx_OBGetConfig(FLASH_OBProgramInitTypeDef *pOBInit) -{ - pOBInit->OptionType = OPTIONBYTE_WRP | OPTIONBYTE_RDP | OPTIONBYTE_USER |\ - OPTIONBYTE_BOR | OPTIONBYTE_BOOTADDR_0 | OPTIONBYTE_BOOTADDR_1; - - /*Get WRP*/ - pOBInit->WRPSector = FLASH_OB_GetWRP(); - - /*Get RDP Level*/ - pOBInit->RDPLevel = FLASH_OB_GetRDP(); - - /*Get USER*/ - pOBInit->USERConfig = FLASH_OB_GetUser(); - - /*Get BOR Level*/ - pOBInit->BORLevel = FLASH_OB_GetBOR(); - - /*Get Boot Address when Boot pin = 0 */ - pOBInit->BootAddr0 = FLASH_OB_GetBootAddress(OPTIONBYTE_BOOTADDR_0); - - /*Get Boot Address when Boot pin = 1 */ - pOBInit->BootAddr1 = FLASH_OB_GetBootAddress(OPTIONBYTE_BOOTADDR_1); -} - -/** - * @} - */ - -/** - * @brief Full erase of FLASH memory sectors - * @param VoltageRange: The device voltage range which defines the erase parallelism. - * This parameter can be one of the following values: - * @arg VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V, - * the operation will be done by byte (8-bit) - * @arg VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V, - * the operation will be done by half word (16-bit) - * @arg VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V, - * the operation will be done by word (32-bit) - * @arg VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp, - * the operation will be done by double word (64-bit) - * - * @retval HAL Status - */ -static void FLASH_MassErase(uint8_t VoltageRange) -{ - uint32_t tmp_psize = 0; - - /* Check the parameters */ - assert_param(IS_VOLTAGERANGE(VoltageRange)); - - /* if the previous operation is completed, proceed to erase all sectors */ - FLASH->CR &= CR_PSIZE_MASK; - FLASH->CR |= tmp_psize; - FLASH->CR |= FLASH_CR_MER; - FLASH->CR |= FLASH_CR_STRT; - /* Data synchronous Barrier (DSB) Just after the write operation - This will force the CPU to respect the sequence of instruction (no optimization).*/ - __DSB(); -} - -/** - * @brief Erase the specified FLASH memory sector - * @param Sector: FLASH sector to erase - * The value of this parameter depend on device used within the same series - * @param VoltageRange: The device voltage range which defines the erase parallelism. - * This parameter can be one of the following values: - * @arg FLASH_VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V, - * the operation will be done by byte (8-bit) - * @arg FLASH_VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V, - * the operation will be done by half word (16-bit) - * @arg FLASH_VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V, - * the operation will be done by word (32-bit) - * @arg FLASH_VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp, - * the operation will be done by double word (64-bit) - * - * @retval None - */ -void FLASH_Erase_Sector(uint32_t Sector, uint8_t VoltageRange) -{ - uint32_t tmp_psize = 0; - - /* Check the parameters */ - assert_param(IS_FLASH_SECTOR(Sector)); - assert_param(IS_VOLTAGERANGE(VoltageRange)); - - if(VoltageRange == FLASH_VOLTAGE_RANGE_1) - { - tmp_psize = FLASH_PSIZE_BYTE; - } - else if(VoltageRange == FLASH_VOLTAGE_RANGE_2) - { - tmp_psize = FLASH_PSIZE_HALF_WORD; - } - else if(VoltageRange == FLASH_VOLTAGE_RANGE_3) - { - tmp_psize = FLASH_PSIZE_WORD; - } - else - { - tmp_psize = FLASH_PSIZE_DOUBLE_WORD; - } - - /* If the previous operation is completed, proceed to erase the sector */ - FLASH->CR &= CR_PSIZE_MASK; - FLASH->CR |= tmp_psize; - FLASH->CR &= SECTOR_MASK; - FLASH->CR |= FLASH_CR_SER | (Sector << POSITION_VAL(FLASH_CR_SNB)); - FLASH->CR |= FLASH_CR_STRT; - - /* Data synchronous Barrier (DSB) Just after the write operation - This will force the CPU to respect the sequence of instruction (no optimization).*/ - __DSB(); -} - -/** - * @brief Enable the write protection of the desired bank1 or bank 2 sectors - * - * @note When the memory read protection level is selected (RDP level = 1), - * it is not possible to program or erase the flash sector i if CortexM4 - * debug features are connected or boot code is executed in RAM, even if nWRPi = 1 - * @note Active value of nWRPi bits is inverted when PCROP mode is active (SPRMOD =1). - * - * @param WRPSector: specifies the sector(s) to be write protected. - * This parameter can be one of the following values: - * @arg WRPSector: A value between OB_WRP_SECTOR_0 and OB_WRP_SECTOR_7 - * @arg OB_WRP_SECTOR_All - * - * @retval HAL FLASH State - */ -static HAL_StatusTypeDef FLASH_OB_EnableWRP(uint32_t WRPSector) -{ - HAL_StatusTypeDef status = HAL_OK; - - /* Check the parameters */ - assert_param(IS_OB_WRP_SECTOR(WRPSector)); - - /* Wait for last operation to be completed */ - status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); - - if(status == HAL_OK) - { - /*Write protection enabled on sectors */ - FLASH->OPTCR &= (~WRPSector); - } - - return status; -} - -/** - * @brief Disable the write protection of the desired bank1 or bank 2 sectors - * - * @note When the memory read protection level is selected (RDP level = 1), - * it is not possible to program or erase the flash sector i if CortexM4 - * debug features are connected or boot code is executed in RAM, even if nWRPi = 1 - * - * @param WRPSector: specifies the sector(s) to be write protected. - * This parameter can be one of the following values: - * @arg WRPSector: A value between OB_WRP_SECTOR_0 and OB_WRP_SECTOR_7 - * @arg OB_WRP_Sector_All - * - * - * @retval HAL Status - */ -static HAL_StatusTypeDef FLASH_OB_DisableWRP(uint32_t WRPSector) -{ - HAL_StatusTypeDef status = HAL_OK; - - /* Check the parameters */ - assert_param(IS_OB_WRP_SECTOR(WRPSector)); - - /* Wait for last operation to be completed */ - status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); - - if(status == HAL_OK) - { - /* Write protection disabled on sectors */ - FLASH->OPTCR |= (WRPSector); - } - - return status; -} - - - - -/** - * @brief Set the read protection level. - * @param Level: specifies the read protection level. - * This parameter can be one of the following values: - * @arg OB_RDP_LEVEL_0: No protection - * @arg OB_RDP_LEVEL_1: Read protection of the memory - * @arg OB_RDP_LEVEL_2: Full chip protection - * - * @note WARNING: When enabling OB_RDP level 2 it's no more possible to go back to level 1 or 0 - * - * @retval HAL Status - */ -static HAL_StatusTypeDef FLASH_OB_RDP_LevelConfig(uint32_t Level) -{ - HAL_StatusTypeDef status = HAL_OK; - - /* Check the parameters */ - assert_param(IS_OB_RDP_LEVEL(Level)); - - /* Wait for last operation to be completed */ - status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); - - if(status == HAL_OK) - { - MODIFY_REG(FLASH->OPTCR, FLASH_OPTCR_RDP, Level); - } - - return status; -} - -/** - * @brief Program the FLASH User Option Byte: IWDG_SW / RST_STOP / RST_STDBY. - * @param Wwdg: Selects the IWDG mode - * This parameter can be one of the following values: - * @arg OB_WWDG_SW: Software WWDG selected - * @arg OB_WWDG_HW: Hardware WWDG selected - * @param Iwdg: Selects the WWDG mode - * This parameter can be one of the following values: - * @arg OB_IWDG_SW: Software IWDG selected - * @arg OB_IWDG_HW: Hardware IWDG selected - * @param Stop: Reset event when entering STOP mode. - * This parameter can be one of the following values: - * @arg OB_STOP_NO_RST: No reset generated when entering in STOP - * @arg OB_STOP_RST: Reset generated when entering in STOP - * @param Stdby: Reset event when entering Standby mode. - * This parameter can be one of the following values: - * @arg OB_STDBY_NO_RST: No reset generated when entering in STANDBY - * @arg OB_STDBY_RST: Reset generated when entering in STANDBY - * @param Iwdgstop: Independent watchdog counter freeze in Stop mode. - * This parameter can be one of the following values: - * @arg OB_IWDG_STOP_FREEZE: Freeze IWDG counter in STOP - * @arg OB_IWDG_STOP_ACTIVE: IWDG counter active in STOP - * @param Iwdgstdby: Independent watchdog counter freeze in standby mode. - * This parameter can be one of the following values: - * @arg OB_IWDG_STDBY_FREEZE: Freeze IWDG counter in STANDBY - * @arg OB_IWDG_STDBY_ACTIVE: IWDG counter active in STANDBY - * @retval HAL Status - */ -static HAL_StatusTypeDef FLASH_OB_UserConfig(uint32_t Wwdg, uint32_t Iwdg, uint32_t Stop, uint32_t Stdby, uint32_t Iwdgstop, uint32_t Iwdgstdby ) -{ - uint32_t useroptionmask = 0x00; - uint32_t useroptionvalue = 0x00; - - HAL_StatusTypeDef status = HAL_OK; - - /* Check the parameters */ - assert_param(IS_OB_WWDG_SOURCE(Wwdg)); - assert_param(IS_OB_IWDG_SOURCE(Iwdg)); - assert_param(IS_OB_STOP_SOURCE(Stop)); - assert_param(IS_OB_STDBY_SOURCE(Stdby)); - assert_param(IS_OB_IWDG_STOP_FREEZE(Iwdgstop)); - assert_param(IS_OB_IWDG_STDBY_FREEZE(Iwdgstdby)); - - /* Wait for last operation to be completed */ - status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); - - if(status == HAL_OK) - { - useroptionmask = (FLASH_OPTCR_WWDG_SW | FLASH_OPTCR_IWDG_SW | FLASH_OPTCR_nRST_STOP | \ - FLASH_OPTCR_nRST_STDBY | FLASH_OPTCR_IWDG_STOP | FLASH_OPTCR_IWDG_STDBY); - - useroptionvalue = (Iwdg | Wwdg | Stop | Stdby | Iwdgstop | Iwdgstdby); - - /* Update User Option Byte */ - MODIFY_REG(FLASH->OPTCR, useroptionmask, useroptionvalue); - } - - return status; - -} - -/** - * @brief Set the BOR Level. - * @param Level: specifies the Option Bytes BOR Reset Level. - * This parameter can be one of the following values: - * @arg OB_BOR_LEVEL3: Supply voltage ranges from 2.7 to 3.6 V - * @arg OB_BOR_LEVEL2: Supply voltage ranges from 2.4 to 2.7 V - * @arg OB_BOR_LEVEL1: Supply voltage ranges from 2.1 to 2.4 V - * @arg OB_BOR_OFF: Supply voltage ranges from 1.62 to 2.1 V - * @retval HAL Status - */ -static HAL_StatusTypeDef FLASH_OB_BOR_LevelConfig(uint8_t Level) -{ - /* Check the parameters */ - assert_param(IS_OB_BOR_LEVEL(Level)); - - /* Set the BOR Level */ - MODIFY_REG(FLASH->OPTCR, FLASH_OPTCR_BOR_LEV, Level); - - return HAL_OK; - -} - -/** - * @brief Configure Boot base address. - * - * @param BootOption : specifies Boot base address depending from Boot pin = 0 or pin = 1 - * This parameter can be one of the following values: - * @arg OPTIONBYTE_BOOTADDR_0 : Boot address based when Boot pin = 0 - * @arg OPTIONBYTE_BOOTADDR_1 : Boot address based when Boot pin = 1 - * @param Address: specifies Boot base address - * This parameter can be one of the following values: - * @arg OB_BOOTADDR_ITCM_RAM : Boot from ITCM RAM (0x00000000) - * @arg OB_BOOTADDR_SYSTEM : Boot from System memory bootloader (0x00100000) - * @arg OB_BOOTADDR_ITCM_FLASH : Boot from Flash on ITCM interface (0x00200000) - * @arg OB_BOOTADDR_AXIM_FLASH : Boot from Flash on AXIM interface (0x08000000) - * @arg OB_BOOTADDR_DTCM_RAM : Boot from DTCM RAM (0x20000000) - * @arg OB_BOOTADDR_SRAM1 : Boot from SRAM1 (0x20010000) - * @arg OB_BOOTADDR_SRAM2 : Boot from SRAM2 (0x2004C000) - * - * @retval HAL Status - */ -static HAL_StatusTypeDef FLASH_OB_BootAddressConfig(uint32_t BootOption, uint32_t Address) -{ - HAL_StatusTypeDef status = HAL_OK; - - /* Check the parameters */ - assert_param(IS_OB_BOOT_ADDRESS(Address)); - - /* Wait for last operation to be completed */ - status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); - - if(status == HAL_OK) - { - if(BootOption == OPTIONBYTE_BOOTADDR_0) - { - MODIFY_REG(FLASH->OPTCR1, FLASH_OPTCR1_BOOT_ADD0, Address); - } - else - { - MODIFY_REG(FLASH->OPTCR1, FLASH_OPTCR1_BOOT_ADD1, (Address << 16)); - } - } - - return status; -} - -/** - * @brief Return the FLASH User Option Byte value. - * @retval uint32_t FLASH User Option Bytes values: IWDG_SW(Bit0), RST_STOP(Bit1) - * and RST_STDBY(Bit2). - */ -static uint32_t FLASH_OB_GetUser(void) -{ - /* Return the User Option Byte */ - return ((uint32_t)(FLASH->OPTCR & 0xC00000F0)); -} - -/** - * @brief Return the FLASH Write Protection Option Bytes value. - * @retval uint32_t FLASH Write Protection Option Bytes value - */ -static uint32_t FLASH_OB_GetWRP(void) -{ - /* Return the FLASH write protection Register value */ - return ((uint32_t)(FLASH->OPTCR & 0x00FF0000)); -} - -/** - * @brief Returns the FLASH Read Protection level. - * @retval FlagStatus FLASH ReadOut Protection Status: - * This parameter can be one of the following values: - * @arg OB_RDP_LEVEL_0: No protection - * @arg OB_RDP_LEVEL_1: Read protection of the memory - * @arg OB_RDP_LEVEL_2: Full chip protection - */ -static uint8_t FLASH_OB_GetRDP(void) -{ - uint8_t readstatus = OB_RDP_LEVEL_0; - - if (((FLASH->OPTCR & FLASH_OPTCR_RDP) >> 8) == OB_RDP_LEVEL_0) - { - readstatus = OB_RDP_LEVEL_0; - } - else if (((FLASH->OPTCR & FLASH_OPTCR_RDP) >> 8) == OB_RDP_LEVEL_2) - { - readstatus = OB_RDP_LEVEL_2; - } - else - { - readstatus = OB_RDP_LEVEL_1; - } - - return readstatus; -} - -/** - * @brief Returns the FLASH BOR level. - * @retval uint32_t The FLASH BOR level: - * - OB_BOR_LEVEL3: Supply voltage ranges from 2.7 to 3.6 V - * - OB_BOR_LEVEL2: Supply voltage ranges from 2.4 to 2.7 V - * - OB_BOR_LEVEL1: Supply voltage ranges from 2.1 to 2.4 V - * - OB_BOR_OFF : Supply voltage ranges from 1.62 to 2.1 V - */ -static uint32_t FLASH_OB_GetBOR(void) -{ - /* Return the FLASH BOR level */ - return ((uint32_t)(FLASH->OPTCR & 0x0C)); -} - -/** - * @brief Configure Boot base address. - * - * @param BootOption : specifies Boot base address depending from Boot pin = 0 or pin = 1 - * This parameter can be one of the following values: - * @arg OPTIONBYTE_BOOTADDR_0 : Boot address based when Boot pin = 0 - * @arg OPTIONBYTE_BOOTADDR_1 : Boot address based when Boot pin = 1 - * - * @retval uint32_t Boot Base Address: - * - OB_BOOTADDR_ITCM_RAM : Boot from ITCM RAM (0x00000000) - * - OB_BOOTADDR_SYSTEM : Boot from System memory bootloader (0x00100000) - * - OB_BOOTADDR_ITCM_FLASH : Boot from Flash on ITCM interface (0x00200000) - * - OB_BOOTADDR_AXIM_FLASH : Boot from Flash on AXIM interface (0x08000000) - * - OB_BOOTADDR_DTCM_RAM : Boot from DTCM RAM (0x20000000) - * - OB_BOOTADDR_SRAM1 : Boot from SRAM1 (0x20010000) - * - OB_BOOTADDR_SRAM2 : Boot from SRAM2 (0x2004C000) - */ -static uint32_t FLASH_OB_GetBootAddress(uint32_t BootOption) -{ - uint32_t Address = 0; - - /* Return the Boot base Address */ - if(BootOption == OPTIONBYTE_BOOTADDR_0) - { - Address = FLASH->OPTCR1 & FLASH_OPTCR1_BOOT_ADD0; - } - else - { - Address = ((FLASH->OPTCR1 & FLASH_OPTCR1_BOOT_ADD1) >> 16); - } - - return Address; -} - -/** - * @} - */ - -#endif /* HAL_FLASH_MODULE_ENABLED */ - -/** - * @} - */ - -/** - * @} - */ - -/************************ (C) COPYRIGHT STMicroelectronics *****END OF FILE****/ |