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Diffstat (limited to 'c/src/lib/libbsp/arm/stm32f4x/hal/STM32F4xx_HAL_Driver/Src/stm32f4xx_hal_flash_ex.c')
| -rw-r--r-- | c/src/lib/libbsp/arm/stm32f4x/hal/STM32F4xx_HAL_Driver/Src/stm32f4xx_hal_flash_ex.c | 1359 |
1 files changed, 0 insertions, 1359 deletions
diff --git a/c/src/lib/libbsp/arm/stm32f4x/hal/STM32F4xx_HAL_Driver/Src/stm32f4xx_hal_flash_ex.c b/c/src/lib/libbsp/arm/stm32f4x/hal/STM32F4xx_HAL_Driver/Src/stm32f4xx_hal_flash_ex.c deleted file mode 100644 index a7fed40af2..0000000000 --- a/c/src/lib/libbsp/arm/stm32f4x/hal/STM32F4xx_HAL_Driver/Src/stm32f4xx_hal_flash_ex.c +++ /dev/null @@ -1,1359 +0,0 @@ -/** - ****************************************************************************** - * @file stm32f4xx_hal_flash_ex.c - * @author MCD Application Team - * @version V1.4.0 - * @date 14-August-2015 - * @brief Extended FLASH HAL module driver. - * This file provides firmware functions to manage the following - * functionalities of the FLASH extension peripheral: - * + Extended programming operations functions - * - @verbatim - ============================================================================== - ##### Flash Extension features ##### - ============================================================================== - - [..] Comparing to other previous devices, the FLASH interface for STM32F427xx/437xx and - STM32F429xx/439xx devices contains the following additional features - - (+) Capacity up to 2 Mbyte with dual bank architecture supporting read-while-write - capability (RWW) - (+) Dual bank memory organization - (+) PCROP protection for all banks - - ##### How to use this driver ##### - ============================================================================== - [..] This driver provides functions to configure and program the FLASH memory - of all STM32F427xx/437xx, STM32F429xx/439xx, STM32F469xx/479xx and STM32F446xx - devices. It includes - (#) FLASH Memory Erase functions: - (++) Lock and Unlock the FLASH interface using HAL_FLASH_Unlock() and - HAL_FLASH_Lock() functions - (++) Erase function: Erase sector, erase all sectors - (++) There are two modes of erase : - (+++) Polling Mode using HAL_FLASHEx_Erase() - (+++) Interrupt Mode using HAL_FLASHEx_Erase_IT() - - (#) Option Bytes Programming functions: Use HAL_FLASHEx_OBProgram() to : - (++) Set/Reset the write protection - (++) Set the Read protection Level - (++) Set the BOR level - (++) Program the user Option Bytes - (#) Advanced Option Bytes Programming functions: Use HAL_FLASHEx_AdvOBProgram() to : - (++) Extended space (bank 2) erase function - (++) Full FLASH space (2 Mo) erase (bank 1 and bank 2) - (++) Dual Boot activation - (++) Write protection configuration for bank 2 - (++) PCROP protection configuration and control for both banks - - @endverbatim - ****************************************************************************** - * @attention - * - * <h2><center>© COPYRIGHT(c) 2015 STMicroelectronics</center></h2> - * - * Redistribution and use in source and binary forms, with or without modification, - * are permitted provided that the following conditions are met: - * 1. Redistributions of source code must retain the above copyright notice, - * this list of conditions and the following disclaimer. - * 2. Redistributions in binary form must reproduce the above copyright notice, - * this list of conditions and the following disclaimer in the documentation - * and/or other materials provided with the distribution. - * 3. Neither the name of STMicroelectronics nor the names of its contributors - * may be used to endorse or promote products derived from this software - * without specific prior written permission. - * - * THIS SOFTWARE IS PROVIDED BY THE COPYRIGHT HOLDERS AND CONTRIBUTORS "AS IS" - * AND ANY EXPRESS OR IMPLIED WARRANTIES, INCLUDING, BUT NOT LIMITED TO, THE - * IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE ARE - * DISCLAIMED. IN NO EVENT SHALL THE COPYRIGHT HOLDER OR CONTRIBUTORS BE LIABLE - * FOR ANY DIRECT, INDIRECT, INCIDENTAL, SPECIAL, EXEMPLARY, OR CONSEQUENTIAL - * DAMAGES (INCLUDING, BUT NOT LIMITED TO, PROCUREMENT OF SUBSTITUTE GOODS OR - * SERVICES; LOSS OF USE, DATA, OR PROFITS; OR BUSINESS INTERRUPTION) HOWEVER - * CAUSED AND ON ANY THEORY OF LIABILITY, WHETHER IN CONTRACT, STRICT LIABILITY, - * OR TORT (INCLUDING NEGLIGENCE OR OTHERWISE) ARISING IN ANY WAY OUT OF THE USE - * OF THIS SOFTWARE, EVEN IF ADVISED OF THE POSSIBILITY OF SUCH DAMAGE. - * - ****************************************************************************** - */ - -/* Includes ------------------------------------------------------------------*/ -#include "stm32f4xx_hal.h" - -/** @addtogroup STM32F4xx_HAL_Driver - * @{ - */ - -/** @defgroup FLASHEx FLASHEx - * @brief FLASH HAL Extension module driver - * @{ - */ - -#ifdef HAL_FLASH_MODULE_ENABLED - -/* Private typedef -----------------------------------------------------------*/ -/* Private define ------------------------------------------------------------*/ -/** @addtogroup FLASHEx_Private_Constants - * @{ - */ -#define FLASH_TIMEOUT_VALUE ((uint32_t)50000)/* 50 s */ -/** - * @} - */ - -/* Private macro -------------------------------------------------------------*/ -/* Private variables ---------------------------------------------------------*/ -/** @addtogroup FLASHEx_Private_Variables - * @{ - */ -extern FLASH_ProcessTypeDef pFlash; -/** - * @} - */ - -/* Private function prototypes -----------------------------------------------*/ -/** @addtogroup FLASHEx_Private_Functions - * @{ - */ -/* Option bytes control */ -static void FLASH_MassErase(uint8_t VoltageRange, uint32_t Banks); -void FLASH_FlushCaches(void); -static HAL_StatusTypeDef FLASH_OB_EnableWRP(uint32_t WRPSector, uint32_t Banks); -static HAL_StatusTypeDef FLASH_OB_DisableWRP(uint32_t WRPSector, uint32_t Banks); -static HAL_StatusTypeDef FLASH_OB_RDP_LevelConfig(uint8_t Level); -static HAL_StatusTypeDef FLASH_OB_UserConfig(uint8_t Iwdg, uint8_t Stop, uint8_t Stdby); -static HAL_StatusTypeDef FLASH_OB_BOR_LevelConfig(uint8_t Level); -static uint8_t FLASH_OB_GetUser(void); -static uint16_t FLASH_OB_GetWRP(void); -static uint8_t FLASH_OB_GetRDP(void); -static uint8_t FLASH_OB_GetBOR(void); - -#if defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F410Tx) || defined(STM32F410Cx) || defined(STM32F410Rx) || defined(STM32F411xE) ||\ - defined(STM32F446xx) -static HAL_StatusTypeDef FLASH_OB_EnablePCROP(uint32_t Sector); -static HAL_StatusTypeDef FLASH_OB_DisablePCROP(uint32_t Sector); -#endif /* STM32F401xC || STM32F401xE || STM32F410xx || STM32F411xE || STM32F446xx */ - -#if defined(STM32F427xx) || defined(STM32F437xx) || defined(STM32F429xx)|| defined(STM32F439xx) || defined(STM32F469xx) || defined(STM32F479xx) -static HAL_StatusTypeDef FLASH_OB_EnablePCROP(uint32_t SectorBank1, uint32_t SectorBank2, uint32_t Banks); -static HAL_StatusTypeDef FLASH_OB_DisablePCROP(uint32_t SectorBank1, uint32_t SectorBank2, uint32_t Banks); -static HAL_StatusTypeDef FLASH_OB_BootConfig(uint8_t BootConfig); -#endif /* STM32F427xx || STM32F437xx || STM32F429xx || STM32F439xx || STM32F469xx || STM32F479xx */ - -extern HAL_StatusTypeDef FLASH_WaitForLastOperation(uint32_t Timeout); -/** - * @} - */ - -/* Exported functions --------------------------------------------------------*/ -/** @defgroup FLASHEx_Exported_Functions FLASHEx Exported Functions - * @{ - */ - -/** @defgroup FLASHEx_Exported_Functions_Group1 Extended IO operation functions - * @brief Extended IO operation functions - * -@verbatim - =============================================================================== - ##### Extended programming operation functions ##### - =============================================================================== - [..] - This subsection provides a set of functions allowing to manage the Extension FLASH - programming operations. - -@endverbatim - * @{ - */ -/** - * @brief Perform a mass erase or erase the specified FLASH memory sectors - * @param[in] pEraseInit: pointer to an FLASH_EraseInitTypeDef structure that - * contains the configuration information for the erasing. - * - * @param[out] SectorError: pointer to variable that - * contains the configuration information on faulty sector in case of error - * (0xFFFFFFFF means that all the sectors have been correctly erased) - * - * @retval HAL Status - */ -HAL_StatusTypeDef HAL_FLASHEx_Erase(FLASH_EraseInitTypeDef *pEraseInit, uint32_t *SectorError) -{ - HAL_StatusTypeDef status = HAL_ERROR; - uint32_t index = 0; - - /* Process Locked */ - __HAL_LOCK(&pFlash); - - /* Check the parameters */ - assert_param(IS_FLASH_TYPEERASE(pEraseInit->TypeErase)); - - /* Wait for last operation to be completed */ - status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); - - if(status == HAL_OK) - { - /*Initialization of SectorError variable*/ - *SectorError = 0xFFFFFFFF; - - if(pEraseInit->TypeErase == FLASH_TYPEERASE_MASSERASE) - { - /*Mass erase to be done*/ - FLASH_MassErase((uint8_t) pEraseInit->VoltageRange, pEraseInit->Banks); - - /* Wait for last operation to be completed */ - status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); - - /* if the erase operation is completed, disable the MER Bit */ - FLASH->CR &= (~FLASH_MER_BIT); - } - else - { - /* Check the parameters */ - assert_param(IS_FLASH_NBSECTORS(pEraseInit->NbSectors + pEraseInit->Sector)); - - /* Erase by sector by sector to be done*/ - for(index = pEraseInit->Sector; index < (pEraseInit->NbSectors + pEraseInit->Sector); index++) - { - FLASH_Erase_Sector(index, (uint8_t) pEraseInit->VoltageRange); - - /* Wait for last operation to be completed */ - status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); - - /* If the erase operation is completed, disable the SER and SNB Bits */ - CLEAR_BIT(FLASH->CR, (FLASH_CR_SER | FLASH_CR_SNB)); - - if(status != HAL_OK) - { - /* In case of error, stop erase procedure and return the faulty sector*/ - *SectorError = index; - break; - } - } - } - /* Flush the caches to be sure of the data consistency */ - FLASH_FlushCaches(); - } - - /* Process Unlocked */ - __HAL_UNLOCK(&pFlash); - - return status; -} - -/** - * @brief Perform a mass erase or erase the specified FLASH memory sectors with interrupt enabled - * @param pEraseInit: pointer to an FLASH_EraseInitTypeDef structure that - * contains the configuration information for the erasing. - * - * @retval HAL Status - */ -HAL_StatusTypeDef HAL_FLASHEx_Erase_IT(FLASH_EraseInitTypeDef *pEraseInit) -{ - HAL_StatusTypeDef status = HAL_OK; - - /* Process Locked */ - __HAL_LOCK(&pFlash); - - /* Check the parameters */ - assert_param(IS_FLASH_TYPEERASE(pEraseInit->TypeErase)); - - /* Enable End of FLASH Operation interrupt */ - __HAL_FLASH_ENABLE_IT(FLASH_IT_EOP); - - /* Enable Error source interrupt */ - __HAL_FLASH_ENABLE_IT(FLASH_IT_ERR); - - /* Clear pending flags (if any) */ - __HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |\ - FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR| FLASH_FLAG_PGSERR); - - if(pEraseInit->TypeErase == FLASH_TYPEERASE_MASSERASE) - { - /*Mass erase to be done*/ - pFlash.ProcedureOnGoing = FLASH_PROC_MASSERASE; - pFlash.Bank = pEraseInit->Banks; - FLASH_MassErase((uint8_t) pEraseInit->VoltageRange, pEraseInit->Banks); - } - else - { - /* Erase by sector to be done*/ - - /* Check the parameters */ - assert_param(IS_FLASH_NBSECTORS(pEraseInit->NbSectors + pEraseInit->Sector)); - - pFlash.ProcedureOnGoing = FLASH_PROC_SECTERASE; - pFlash.NbSectorsToErase = pEraseInit->NbSectors; - pFlash.Sector = pEraseInit->Sector; - pFlash.VoltageForErase = (uint8_t)pEraseInit->VoltageRange; - - /*Erase 1st sector and wait for IT*/ - FLASH_Erase_Sector(pEraseInit->Sector, pEraseInit->VoltageRange); - } - - return status; -} - -/** - * @brief Program option bytes - * @param pOBInit: pointer to an FLASH_OBInitStruct structure that - * contains the configuration information for the programming. - * - * @retval HAL Status - */ -HAL_StatusTypeDef HAL_FLASHEx_OBProgram(FLASH_OBProgramInitTypeDef *pOBInit) -{ - HAL_StatusTypeDef status = HAL_ERROR; - - /* Process Locked */ - __HAL_LOCK(&pFlash); - - /* Check the parameters */ - assert_param(IS_OPTIONBYTE(pOBInit->OptionType)); - - /*Write protection configuration*/ - if((pOBInit->OptionType & OPTIONBYTE_WRP) == OPTIONBYTE_WRP) - { - assert_param(IS_WRPSTATE(pOBInit->WRPState)); - if(pOBInit->WRPState == OB_WRPSTATE_ENABLE) - { - /*Enable of Write protection on the selected Sector*/ - status = FLASH_OB_EnableWRP(pOBInit->WRPSector, pOBInit->Banks); - } - else - { - /*Disable of Write protection on the selected Sector*/ - status = FLASH_OB_DisableWRP(pOBInit->WRPSector, pOBInit->Banks); - } - } - - /*Read protection configuration*/ - if((pOBInit->OptionType & OPTIONBYTE_RDP) == OPTIONBYTE_RDP) - { - status = FLASH_OB_RDP_LevelConfig(pOBInit->RDPLevel); - } - - /*USER configuration*/ - if((pOBInit->OptionType & OPTIONBYTE_USER) == OPTIONBYTE_USER) - { - status = FLASH_OB_UserConfig(pOBInit->USERConfig&OB_IWDG_SW, - pOBInit->USERConfig&OB_STOP_NO_RST, - pOBInit->USERConfig&OB_STDBY_NO_RST); - } - - /*BOR Level configuration*/ - if((pOBInit->OptionType & OPTIONBYTE_BOR) == OPTIONBYTE_BOR) - { - status = FLASH_OB_BOR_LevelConfig(pOBInit->BORLevel); - } - - /* Process Unlocked */ - __HAL_UNLOCK(&pFlash); - - return status; -} - -/** - * @brief Flush the instruction and data caches - * @retval None - */ -void FLASH_FlushCaches(void) -{ - /* Flush instruction cache */ - if(READ_BIT(FLASH->ACR, FLASH_ACR_ICEN)) - { - /* Disable instruction cache */ - __HAL_FLASH_INSTRUCTION_CACHE_DISABLE(); - /* Reset instruction cache */ - __HAL_FLASH_INSTRUCTION_CACHE_RESET(); - /* Enable instruction cache */ - __HAL_FLASH_INSTRUCTION_CACHE_ENABLE(); - } - - /* Flush data cache */ - if(READ_BIT(FLASH->ACR, FLASH_ACR_DCEN)) - { - /* Disable data cache */ - __HAL_FLASH_DATA_CACHE_DISABLE(); - /* Reset data cache */ - __HAL_FLASH_DATA_CACHE_RESET(); - /* Enable data cache */ - __HAL_FLASH_DATA_CACHE_ENABLE(); - } -} - -/** - * @brief Get the Option byte configuration - * @param pOBInit: pointer to an FLASH_OBInitStruct structure that - * contains the configuration information for the programming. - * - * @retval None - */ -void HAL_FLASHEx_OBGetConfig(FLASH_OBProgramInitTypeDef *pOBInit) -{ - pOBInit->OptionType = OPTIONBYTE_WRP | OPTIONBYTE_RDP | OPTIONBYTE_USER | OPTIONBYTE_BOR; - - /*Get WRP*/ - pOBInit->WRPSector = (uint32_t)FLASH_OB_GetWRP(); - - /*Get RDP Level*/ - pOBInit->RDPLevel = (uint32_t)FLASH_OB_GetRDP(); - - /*Get USER*/ - pOBInit->USERConfig = (uint8_t)FLASH_OB_GetUser(); - - /*Get BOR Level*/ - pOBInit->BORLevel = (uint32_t)FLASH_OB_GetBOR(); -} - -#if defined(STM32F427xx) || defined(STM32F437xx) || defined(STM32F429xx) || defined(STM32F439xx) ||\ - defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F410Tx) || defined(STM32F410Cx) ||\ - defined(STM32F410Rx) || defined(STM32F411xE) || defined(STM32F446xx) || defined(STM32F469xx) ||\ - defined(STM32F479xx) -/** - * @brief Program option bytes - * @param pAdvOBInit: pointer to an FLASH_AdvOBProgramInitTypeDef structure that - * contains the configuration information for the programming. - * - * @retval HAL Status - */ -HAL_StatusTypeDef HAL_FLASHEx_AdvOBProgram (FLASH_AdvOBProgramInitTypeDef *pAdvOBInit) -{ - HAL_StatusTypeDef status = HAL_ERROR; - - /* Check the parameters */ - assert_param(IS_OBEX(pAdvOBInit->OptionType)); - - /*Program PCROP option byte*/ - if(((pAdvOBInit->OptionType) & OPTIONBYTE_PCROP) == OPTIONBYTE_PCROP) - { - /* Check the parameters */ - assert_param(IS_PCROPSTATE(pAdvOBInit->PCROPState)); - if((pAdvOBInit->PCROPState) == OB_PCROP_STATE_ENABLE) - { - /*Enable of Write protection on the selected Sector*/ -#if defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F410Tx) || defined(STM32F410Cx) || defined(STM32F410Rx) ||\ - defined(STM32F411xE) || defined(STM32F446xx) - status = FLASH_OB_EnablePCROP(pAdvOBInit->Sectors); -#else /* STM32F427xx || STM32F437xx || STM32F429xx|| STM32F439xx || STM32F469xx || STM32F479xx */ - status = FLASH_OB_EnablePCROP(pAdvOBInit->SectorsBank1, pAdvOBInit->SectorsBank2, pAdvOBInit->Banks); -#endif /* STM32F401xC || STM32F401xE || STM32F410xx || STM32F411xE || STM32F446xx */ - } - else - { - /*Disable of Write protection on the selected Sector*/ -#if defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F410Tx) || defined(STM32F410Cx) || defined(STM32F410Rx) ||\ - defined(STM32F411xE) || defined(STM32F446xx) - status = FLASH_OB_DisablePCROP(pAdvOBInit->Sectors); -#else /* STM32F427xx || STM32F437xx || STM32F429xx|| STM32F439xx || STM32F469xx || STM32F479xx */ - status = FLASH_OB_DisablePCROP(pAdvOBInit->SectorsBank1, pAdvOBInit->SectorsBank2, pAdvOBInit->Banks); -#endif /* STM32F401xC || STM32F401xE || STM32F410xx || STM32F411xE || STM32F446xx */ - } - } - -#if defined(STM32F427xx) || defined(STM32F437xx) || defined(STM32F429xx) || defined(STM32F439xx) || defined(STM32F469xx) || defined(STM32F479xx) - /*Program BOOT config option byte*/ - if(((pAdvOBInit->OptionType) & OPTIONBYTE_BOOTCONFIG) == OPTIONBYTE_BOOTCONFIG) - { - status = FLASH_OB_BootConfig(pAdvOBInit->BootConfig); - } -#endif /* STM32F427xx || STM32F437xx || STM32F429xx || STM32F439xx || STM32F469xx || STM32F479xx */ - - return status; -} - -/** - * @brief Get the OBEX byte configuration - * @param pAdvOBInit: pointer to an FLASH_AdvOBProgramInitTypeDef structure that - * contains the configuration information for the programming. - * - * @retval None - */ -void HAL_FLASHEx_AdvOBGetConfig(FLASH_AdvOBProgramInitTypeDef *pAdvOBInit) -{ -#if defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F410Tx) || defined(STM32F410Cx) || defined(STM32F410Rx) ||\ - defined(STM32F411xE) || defined(STM32F446xx) - /*Get Sector*/ - pAdvOBInit->Sectors = (*(__IO uint16_t *)(OPTCR_BYTE2_ADDRESS)); -#else /* STM32F427xx || STM32F437xx || STM32F429xx|| STM32F439xx || STM32F469xx || STM32F479xx */ - /*Get Sector for Bank1*/ - pAdvOBInit->SectorsBank1 = (*(__IO uint16_t *)(OPTCR_BYTE2_ADDRESS)); - - /*Get Sector for Bank2*/ - pAdvOBInit->SectorsBank2 = (*(__IO uint16_t *)(OPTCR1_BYTE2_ADDRESS)); - - /*Get Boot config OB*/ - pAdvOBInit->BootConfig = *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS; -#endif /* STM32F401xC || STM32F401xE || STM32F410xx || STM32F411xE || STM32F446xx */ -} - -/** - * @brief Select the Protection Mode - * - * @note After PCROP activated Option Byte modification NOT POSSIBLE! excepted - * Global Read Out Protection modification (from level1 to level0) - * @note Once SPRMOD bit is active unprotection of a protected sector is not possible - * @note Read a protected sector will set RDERR Flag and write a protected sector will set WRPERR Flag - * @note This function can be used only for STM32F42xxx/STM32F43xxx/STM32F401xx/STM32F411xx/STM32F446xx/ - * STM32F469xx/STM32F479xx devices. - * - * @retval HAL Status - */ -HAL_StatusTypeDef HAL_FLASHEx_OB_SelectPCROP(void) -{ - uint8_t optiontmp = 0xFF; - - /* Mask SPRMOD bit */ - optiontmp = (uint8_t)((*(__IO uint8_t *)OPTCR_BYTE3_ADDRESS) & (uint8_t)0x7F); - - /* Update Option Byte */ - *(__IO uint8_t *)OPTCR_BYTE3_ADDRESS = (uint8_t)(OB_PCROP_SELECTED | optiontmp); - - return HAL_OK; -} - -/** - * @brief Deselect the Protection Mode - * - * @note After PCROP activated Option Byte modification NOT POSSIBLE! excepted - * Global Read Out Protection modification (from level1 to level0) - * @note Once SPRMOD bit is active unprotection of a protected sector is not possible - * @note Read a protected sector will set RDERR Flag and write a protected sector will set WRPERR Flag - * @note This function can be used only for STM32F42xxx/STM32F43xxx/STM32F401xx/STM32F411xx/STM32F446xx/ - * STM32F469xx/STM32F479xx devices. - * - * @retval HAL Status - */ -HAL_StatusTypeDef HAL_FLASHEx_OB_DeSelectPCROP(void) -{ - uint8_t optiontmp = 0xFF; - - /* Mask SPRMOD bit */ - optiontmp = (uint8_t)((*(__IO uint8_t *)OPTCR_BYTE3_ADDRESS) & (uint8_t)0x7F); - - /* Update Option Byte */ - *(__IO uint8_t *)OPTCR_BYTE3_ADDRESS = (uint8_t)(OB_PCROP_DESELECTED | optiontmp); - - return HAL_OK; -} -#endif /* STM32F427xx || STM32F437xx || STM32F429xx || STM32F439xx || STM32F401xC || STM32F401xE || STM32F410xx ||\ - STM32F411xE || STM32F469xx || STM32F479xx */ - -#if defined(STM32F427xx) || defined(STM32F437xx) || defined(STM32F429xx)|| defined(STM32F439xx) || defined(STM32F469xx) || defined(STM32F479xx) -/** - * @brief Returns the FLASH Write Protection Option Bytes value for Bank 2 - * @note This function can be used only for STM32F42xxx/STM32F43xxx/STM32F469xx/STM32F479xx devices. - * @retval The FLASH Write Protection Option Bytes value - */ -uint16_t HAL_FLASHEx_OB_GetBank2WRP(void) -{ - /* Return the FLASH write protection Register value */ - return (*(__IO uint16_t *)(OPTCR1_BYTE2_ADDRESS)); -} -#endif /* STM32F427xx || STM32F437xx || STM32F429xx || STM32F439xx || STM32F469xx || STM32F479xx */ - -/** - * @} - */ - -#if defined(STM32F427xx) || defined(STM32F437xx) || defined(STM32F429xx) || defined(STM32F439xx) || defined(STM32F469xx) || defined(STM32F479xx) -/** - * @brief Full erase of FLASH memory sectors - * @param VoltageRange: The device voltage range which defines the erase parallelism. - * This parameter can be one of the following values: - * @arg FLASH_VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V, - * the operation will be done by byte (8-bit) - * @arg FLASH_VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V, - * the operation will be done by half word (16-bit) - * @arg FLASH_VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V, - * the operation will be done by word (32-bit) - * @arg FLASH_VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp, - * the operation will be done by double word (64-bit) - * - * @param Banks: Banks to be erased - * This parameter can be one of the following values: - * @arg FLASH_BANK_1: Bank1 to be erased - * @arg FLASH_BANK_2: Bank2 to be erased - * @arg FLASH_BANK_BOTH: Bank1 and Bank2 to be erased - * - * @retval HAL Status - */ -static void FLASH_MassErase(uint8_t VoltageRange, uint32_t Banks) -{ - uint32_t tmp_psize = 0; - - /* Check the parameters */ - assert_param(IS_VOLTAGERANGE(VoltageRange)); - assert_param(IS_FLASH_BANK(Banks)); - - /* if the previous operation is completed, proceed to erase all sectors */ - CLEAR_BIT(FLASH->CR, FLASH_CR_PSIZE); - FLASH->CR |= tmp_psize; - if(Banks == FLASH_BANK_BOTH) - { - /* bank1 & bank2 will be erased*/ - FLASH->CR |= FLASH_MER_BIT; - } - else if(Banks == FLASH_BANK_1) - { - /*Only bank1 will be erased*/ - FLASH->CR |= FLASH_CR_MER1; - } - else - { - /*Only bank2 will be erased*/ - FLASH->CR |= FLASH_CR_MER2; - } - FLASH->CR |= FLASH_CR_STRT; -} - -/** - * @brief Erase the specified FLASH memory sector - * @param Sector: FLASH sector to erase - * The value of this parameter depend on device used within the same series - * @param VoltageRange: The device voltage range which defines the erase parallelism. - * This parameter can be one of the following values: - * @arg FLASH_VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V, - * the operation will be done by byte (8-bit) - * @arg FLASH_VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V, - * the operation will be done by half word (16-bit) - * @arg FLASH_VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V, - * the operation will be done by word (32-bit) - * @arg FLASH_VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp, - * the operation will be done by double word (64-bit) - * - * @retval None - */ -void FLASH_Erase_Sector(uint32_t Sector, uint8_t VoltageRange) -{ - uint32_t tmp_psize = 0; - - /* Check the parameters */ - assert_param(IS_FLASH_SECTOR(Sector)); - assert_param(IS_VOLTAGERANGE(VoltageRange)); - - if(VoltageRange == FLASH_VOLTAGE_RANGE_1) - { - tmp_psize = FLASH_PSIZE_BYTE; - } - else if(VoltageRange == FLASH_VOLTAGE_RANGE_2) - { - tmp_psize = FLASH_PSIZE_HALF_WORD; - } - else if(VoltageRange == FLASH_VOLTAGE_RANGE_3) - { - tmp_psize = FLASH_PSIZE_WORD; - } - else - { - tmp_psize = FLASH_PSIZE_DOUBLE_WORD; - } - - /* Need to add offset of 4 when sector higher than FLASH_SECTOR_11 */ - if(Sector > FLASH_SECTOR_11) - { - Sector += 4; - } - /* If the previous operation is completed, proceed to erase the sector */ - CLEAR_BIT(FLASH->CR, FLASH_CR_PSIZE); - FLASH->CR |= tmp_psize; - CLEAR_BIT(FLASH->CR, FLASH_CR_SNB); - FLASH->CR |= FLASH_CR_SER | (Sector << POSITION_VAL(FLASH_CR_SNB)); - FLASH->CR |= FLASH_CR_STRT; -} - -/** - * @brief Enable the write protection of the desired bank1 or bank 2 sectors - * - * @note When the memory read protection level is selected (RDP level = 1), - * it is not possible to program or erase the flash sector i if CortexM4 - * debug features are connected or boot code is executed in RAM, even if nWRPi = 1 - * @note Active value of nWRPi bits is inverted when PCROP mode is active (SPRMOD =1). - * - * @param WRPSector: specifies the sector(s) to be write protected. - * This parameter can be one of the following values: - * @arg WRPSector: A value between OB_WRP_SECTOR_0 and OB_WRP_SECTOR_23 - * @arg OB_WRP_SECTOR_All - * @note BANK2 starts from OB_WRP_SECTOR_12 - * - * @param Banks: Enable write protection on all the sectors for the specific bank - * This parameter can be one of the following values: - * @arg FLASH_BANK_1: WRP on all sectors of bank1 - * @arg FLASH_BANK_2: WRP on all sectors of bank2 - * @arg FLASH_BANK_BOTH: WRP on all sectors of bank1 & bank2 - * - * @retval HAL FLASH State - */ -static HAL_StatusTypeDef FLASH_OB_EnableWRP(uint32_t WRPSector, uint32_t Banks) -{ - HAL_StatusTypeDef status = HAL_OK; - - /* Check the parameters */ - assert_param(IS_OB_WRP_SECTOR(WRPSector)); - assert_param(IS_FLASH_BANK(Banks)); - - /* Wait for last operation to be completed */ - status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); - - if(status == HAL_OK) - { - if(((WRPSector == OB_WRP_SECTOR_All) && ((Banks == FLASH_BANK_1) || (Banks == FLASH_BANK_BOTH))) || - (WRPSector < OB_WRP_SECTOR_12)) - { - if(WRPSector == OB_WRP_SECTOR_All) - { - /*Write protection on all sector of BANK1*/ - *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~(WRPSector>>12)); - } - else - { - /*Write protection done on sectors of BANK1*/ - *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~WRPSector); - } - } - else - { - /*Write protection done on sectors of BANK2*/ - *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS &= (~(WRPSector>>12)); - } - - /*Write protection on all sector of BANK2*/ - if((WRPSector == OB_WRP_SECTOR_All) && (Banks == FLASH_BANK_BOTH)) - { - /* Wait for last operation to be completed */ - status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); - - if(status == HAL_OK) - { - *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS &= (~(WRPSector>>12)); - } - } - - } - return status; -} - -/** - * @brief Disable the write protection of the desired bank1 or bank 2 sectors - * - * @note When the memory read protection level is selected (RDP level = 1), - * it is not possible to program or erase the flash sector i if CortexM4 - * debug features are connected or boot code is executed in RAM, even if nWRPi = 1 - * @note Active value of nWRPi bits is inverted when PCROP mode is active (SPRMOD =1). - * - * @param WRPSector: specifies the sector(s) to be write protected. - * This parameter can be one of the following values: - * @arg WRPSector: A value between OB_WRP_SECTOR_0 and OB_WRP_SECTOR_23 - * @arg OB_WRP_Sector_All - * @note BANK2 starts from OB_WRP_SECTOR_12 - * - * @param Banks: Disable write protection on all the sectors for the specific bank - * This parameter can be one of the following values: - * @arg FLASH_BANK_1: Bank1 to be erased - * @arg FLASH_BANK_2: Bank2 to be erased - * @arg FLASH_BANK_BOTH: Bank1 and Bank2 to be erased - * - * @retval HAL Status - */ -static HAL_StatusTypeDef FLASH_OB_DisableWRP(uint32_t WRPSector, uint32_t Banks) -{ - HAL_StatusTypeDef status = HAL_OK; - - /* Check the parameters */ - assert_param(IS_OB_WRP_SECTOR(WRPSector)); - assert_param(IS_FLASH_BANK(Banks)); - - /* Wait for last operation to be completed */ - status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); - - if(status == HAL_OK) - { - if(((WRPSector == OB_WRP_SECTOR_All) && ((Banks == FLASH_BANK_1) || (Banks == FLASH_BANK_BOTH))) || - (WRPSector < OB_WRP_SECTOR_12)) - { - if(WRPSector == OB_WRP_SECTOR_All) - { - /*Write protection on all sector of BANK1*/ - *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)(WRPSector>>12); - } - else - { - /*Write protection done on sectors of BANK1*/ - *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)WRPSector; - } - } - else - { - /*Write protection done on sectors of BANK2*/ - *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS |= (uint16_t)(WRPSector>>12); - } - - /*Write protection on all sector of BANK2*/ - if((WRPSector == OB_WRP_SECTOR_All) && (Banks == FLASH_BANK_BOTH)) - { - /* Wait for last operation to be completed */ - status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); - - if(status == HAL_OK) - { - *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS |= (uint16_t)(WRPSector>>12); - } - } - - } - - return status; -} - -/** - * @brief Configure the Dual Bank Boot. - * - * @note This function can be used only for STM32F42xxx/43xxx devices. - * - * @param BootConfig specifies the Dual Bank Boot Option byte. - * This parameter can be one of the following values: - * @arg OB_Dual_BootEnabled: Dual Bank Boot Enable - * @arg OB_Dual_BootDisabled: Dual Bank Boot Disabled - * @retval None - */ -static HAL_StatusTypeDef FLASH_OB_BootConfig(uint8_t BootConfig) -{ - HAL_StatusTypeDef status = HAL_OK; - - /* Check the parameters */ - assert_param(IS_OB_BOOT(BootConfig)); - - /* Wait for last operation to be completed */ - status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); - - if(status == HAL_OK) - { - /* Set Dual Bank Boot */ - *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS &= (~FLASH_OPTCR_BFB2); - *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS |= BootConfig; - } - - return status; -} - -/** - * @brief Enable the read/write protection (PCROP) of the desired - * sectors of Bank 1 and/or Bank 2. - * @note This function can be used only for STM32F42xxx/43xxx devices. - * @param SectorBank1 Specifies the sector(s) to be read/write protected or unprotected for bank1. - * This parameter can be one of the following values: - * @arg OB_PCROP: A value between OB_PCROP_SECTOR_0 and OB_PCROP_SECTOR_11 - * @arg OB_PCROP_SECTOR__All - * @param SectorBank2 Specifies the sector(s) to be read/write protected or unprotected for bank2. - * This parameter can be one of the following values: - * @arg OB_PCROP: A value between OB_PCROP_SECTOR_12 and OB_PCROP_SECTOR_23 - * @arg OB_PCROP_SECTOR__All - * @param Banks Enable PCROP protection on all the sectors for the specific bank - * This parameter can be one of the following values: - * @arg FLASH_BANK_1: WRP on all sectors of bank1 - * @arg FLASH_BANK_2: WRP on all sectors of bank2 - * @arg FLASH_BANK_BOTH: WRP on all sectors of bank1 & bank2 - * - * @retval HAL Status - */ -static HAL_StatusTypeDef FLASH_OB_EnablePCROP(uint32_t SectorBank1, uint32_t SectorBank2, uint32_t Banks) -{ - HAL_StatusTypeDef status = HAL_OK; - - assert_param(IS_FLASH_BANK(Banks)); - - /* Wait for last operation to be completed */ - status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); - - if(status == HAL_OK) - { - if((Banks == FLASH_BANK_1) || (Banks == FLASH_BANK_BOTH)) - { - assert_param(IS_OB_PCROP(SectorBank1)); - /*Write protection done on sectors of BANK1*/ - *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)SectorBank1; - } - else - { - assert_param(IS_OB_PCROP(SectorBank2)); - /*Write protection done on sectors of BANK2*/ - *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS |= (uint16_t)SectorBank2; - } - - /*Write protection on all sector of BANK2*/ - if(Banks == FLASH_BANK_BOTH) - { - assert_param(IS_OB_PCROP(SectorBank2)); - /* Wait for last operation to be completed */ - status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); - - if(status == HAL_OK) - { - /*Write protection done on sectors of BANK2*/ - *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS |= (uint16_t)SectorBank2; - } - } - - } - - return status; -} - - -/** - * @brief Disable the read/write protection (PCROP) of the desired - * sectors of Bank 1 and/or Bank 2. - * @note This function can be used only for STM32F42xxx/43xxx devices. - * @param SectorBank1 specifies the sector(s) to be read/write protected or unprotected for bank1. - * This parameter can be one of the following values: - * @arg OB_PCROP: A value between OB_PCROP_SECTOR_0 and OB_PCROP_SECTOR_11 - * @arg OB_PCROP_SECTOR__All - * @param SectorBank2 Specifies the sector(s) to be read/write protected or unprotected for bank2. - * This parameter can be one of the following values: - * @arg OB_PCROP: A value between OB_PCROP_SECTOR_12 and OB_PCROP_SECTOR_23 - * @arg OB_PCROP_SECTOR__All - * @param Banks Disable PCROP protection on all the sectors for the specific bank - * This parameter can be one of the following values: - * @arg FLASH_BANK_1: WRP on all sectors of bank1 - * @arg FLASH_BANK_2: WRP on all sectors of bank2 - * @arg FLASH_BANK_BOTH: WRP on all sectors of bank1 & bank2 - * - * @retval HAL Status - */ -static HAL_StatusTypeDef FLASH_OB_DisablePCROP(uint32_t SectorBank1, uint32_t SectorBank2, uint32_t Banks) -{ - HAL_StatusTypeDef status = HAL_OK; - - /* Check the parameters */ - assert_param(IS_FLASH_BANK(Banks)); - - /* Wait for last operation to be completed */ - status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); - - if(status == HAL_OK) - { - if((Banks == FLASH_BANK_1) || (Banks == FLASH_BANK_BOTH)) - { - assert_param(IS_OB_PCROP(SectorBank1)); - /*Write protection done on sectors of BANK1*/ - *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~SectorBank1); - } - else - { - /*Write protection done on sectors of BANK2*/ - assert_param(IS_OB_PCROP(SectorBank2)); - *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS &= (~SectorBank2); - } - - /*Write protection on all sector of BANK2*/ - if(Banks == FLASH_BANK_BOTH) - { - assert_param(IS_OB_PCROP(SectorBank2)); - /* Wait for last operation to be completed */ - status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); - - if(status == HAL_OK) - { - /*Write protection done on sectors of BANK2*/ - *(__IO uint16_t*)OPTCR1_BYTE2_ADDRESS &= (~SectorBank2); - } - } - - } - - return status; - -} - -#endif /* STM32F427xx || STM32F437xx || STM32F429xx || STM32F439xx || STM32F469xx || STM32F479xx */ - -#if defined(STM32F405xx) || defined(STM32F415xx) || defined(STM32F407xx) || defined(STM32F417xx) ||\ - defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F410Tx) || defined(STM32F410Cx) ||\ - defined(STM32F410Rx) || defined(STM32F411xE) || defined(STM32F446xx) -/** - * @brief Mass erase of FLASH memory - * @param VoltageRange: The device voltage range which defines the erase parallelism. - * This parameter can be one of the following values: - * @arg FLASH_VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V, - * the operation will be done by byte (8-bit) - * @arg FLASH_VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V, - * the operation will be done by half word (16-bit) - * @arg FLASH_VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V, - * the operation will be done by word (32-bit) - * @arg FLASH_VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp, - * the operation will be done by double word (64-bit) - * - * @param Banks: Banks to be erased - * This parameter can be one of the following values: - * @arg FLASH_BANK_1: Bank1 to be erased - * - * @retval None - */ -static void FLASH_MassErase(uint8_t VoltageRange, uint32_t Banks) -{ - uint32_t tmp_psize = 0; - - /* Check the parameters */ - assert_param(IS_VOLTAGERANGE(VoltageRange)); - assert_param(IS_FLASH_BANK(Banks)); - - /* If the previous operation is completed, proceed to erase all sectors */ - CLEAR_BIT(FLASH->CR, FLASH_CR_PSIZE); - FLASH->CR |= tmp_psize; - FLASH->CR |= FLASH_CR_MER; - FLASH->CR |= FLASH_CR_STRT; -} - -/** - * @brief Erase the specified FLASH memory sector - * @param Sector: FLASH sector to erase - * The value of this parameter depend on device used within the same series - * @param VoltageRange: The device voltage range which defines the erase parallelism. - * This parameter can be one of the following values: - * @arg FLASH_VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V, - * the operation will be done by byte (8-bit) - * @arg FLASH_VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V, - * the operation will be done by half word (16-bit) - * @arg FLASH_VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V, - * the operation will be done by word (32-bit) - * @arg FLASH_VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp, - * the operation will be done by double word (64-bit) - * - * @retval None - */ -void FLASH_Erase_Sector(uint32_t Sector, uint8_t VoltageRange) -{ - uint32_t tmp_psize = 0; - - /* Check the parameters */ - assert_param(IS_FLASH_SECTOR(Sector)); - assert_param(IS_VOLTAGERANGE(VoltageRange)); - - if(VoltageRange == FLASH_VOLTAGE_RANGE_1) - { - tmp_psize = FLASH_PSIZE_BYTE; - } - else if(VoltageRange == FLASH_VOLTAGE_RANGE_2) - { - tmp_psize = FLASH_PSIZE_HALF_WORD; - } - else if(VoltageRange == FLASH_VOLTAGE_RANGE_3) - { - tmp_psize = FLASH_PSIZE_WORD; - } - else - { - tmp_psize = FLASH_PSIZE_DOUBLE_WORD; - } - - /* If the previous operation is completed, proceed to erase the sector */ - CLEAR_BIT(FLASH->CR, FLASH_CR_PSIZE); - FLASH->CR |= tmp_psize; - CLEAR_BIT(FLASH->CR, FLASH_CR_SNB); - FLASH->CR |= FLASH_CR_SER | (Sector << POSITION_VAL(FLASH_CR_SNB)); - FLASH->CR |= FLASH_CR_STRT; -} - -/** - * @brief Enable the write protection of the desired bank 1 sectors - * - * @note When the memory read protection level is selected (RDP level = 1), - * it is not possible to program or erase the flash sector i if CortexM4 - * debug features are connected or boot code is executed in RAM, even if nWRPi = 1 - * @note Active value of nWRPi bits is inverted when PCROP mode is active (SPRMOD =1). - * - * @param WRPSector: specifies the sector(s) to be write protected. - * The value of this parameter depend on device used within the same series - * - * @param Banks: Enable write protection on all the sectors for the specific bank - * This parameter can be one of the following values: - * @arg FLASH_BANK_1: WRP on all sectors of bank1 - * - * @retval HAL Status - */ -static HAL_StatusTypeDef FLASH_OB_EnableWRP(uint32_t WRPSector, uint32_t Banks) -{ - HAL_StatusTypeDef status = HAL_OK; - - /* Check the parameters */ - assert_param(IS_OB_WRP_SECTOR(WRPSector)); - assert_param(IS_FLASH_BANK(Banks)); - - /* Wait for last operation to be completed */ - status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); - - if(status == HAL_OK) - { - *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~WRPSector); - } - - return status; -} - -/** - * @brief Disable the write protection of the desired bank 1 sectors - * - * @note When the memory read protection level is selected (RDP level = 1), - * it is not possible to program or erase the flash sector i if CortexM4 - * debug features are connected or boot code is executed in RAM, even if nWRPi = 1 - * @note Active value of nWRPi bits is inverted when PCROP mode is active (SPRMOD =1). - * - * @param WRPSector: specifies the sector(s) to be write protected. - * The value of this parameter depend on device used within the same series - * - * @param Banks: Enable write protection on all the sectors for the specific bank - * This parameter can be one of the following values: - * @arg FLASH_BANK_1: WRP on all sectors of bank1 - * - * @retval HAL Status - */ -static HAL_StatusTypeDef FLASH_OB_DisableWRP(uint32_t WRPSector, uint32_t Banks) -{ - HAL_StatusTypeDef status = HAL_OK; - - /* Check the parameters */ - assert_param(IS_OB_WRP_SECTOR(WRPSector)); - assert_param(IS_FLASH_BANK(Banks)); - - /* Wait for last operation to be completed */ - status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); - - if(status == HAL_OK) - { - *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)WRPSector; - } - - return status; -} -#endif /* STM32F40xxx || STM32F41xxx || STM32F401xx || STM32F410xx || STM32F411xE || STM32F446xx */ - -#if defined(STM32F401xC) || defined(STM32F401xE) || defined(STM32F410Tx) || defined(STM32F410Cx) || defined(STM32F410Rx) ||\ - defined(STM32F411xE) || defined(STM32F446xx) -/** - * @brief Enable the read/write protection (PCROP) of the desired sectors. - * @note This function can be used only for STM32F401xx devices. - * @param Sector specifies the sector(s) to be read/write protected or unprotected. - * This parameter can be one of the following values: - * @arg OB_PCROP: A value between OB_PCROP_Sector0 and OB_PCROP_Sector5 - * @arg OB_PCROP_Sector_All - * @retval HAL Status - */ -static HAL_StatusTypeDef FLASH_OB_EnablePCROP(uint32_t Sector) -{ - HAL_StatusTypeDef status = HAL_OK; - - /* Check the parameters */ - assert_param(IS_OB_PCROP(Sector)); - - /* Wait for last operation to be completed */ - status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); - - if(status == HAL_OK) - { - *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)Sector; - } - - return status; -} - - -/** - * @brief Disable the read/write protection (PCROP) of the desired sectors. - * @note This function can be used only for STM32F401xx devices. - * @param Sector specifies the sector(s) to be read/write protected or unprotected. - * This parameter can be one of the following values: - * @arg OB_PCROP: A value between OB_PCROP_Sector0 and OB_PCROP_Sector5 - * @arg OB_PCROP_Sector_All - * @retval HAL Status - */ -static HAL_StatusTypeDef FLASH_OB_DisablePCROP(uint32_t Sector) -{ - HAL_StatusTypeDef status = HAL_OK; - - /* Check the parameters */ - assert_param(IS_OB_PCROP(Sector)); - - /* Wait for last operation to be completed */ - status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); - - if(status == HAL_OK) - { - *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~Sector); - } - - return status; - -} -#endif /* STM32F401xC || STM32F401xE || STM32F411xE || STM32F446xx */ - -/** - * @brief Set the read protection level. - * @param Level: specifies the read protection level. - * This parameter can be one of the following values: - * @arg OB_RDP_LEVEL_0: No protection - * @arg OB_RDP_LEVEL_1: Read protection of the memory - * @arg OB_RDP_LEVEL_2: Full chip protection - * - * @note WARNING: When enabling OB_RDP level 2 it's no more possible to go back to level 1 or 0 - * - * @retval HAL Status - */ -static HAL_StatusTypeDef FLASH_OB_RDP_LevelConfig(uint8_t Level) -{ - HAL_StatusTypeDef status = HAL_OK; - - /* Check the parameters */ - assert_param(IS_OB_RDP_LEVEL(Level)); - - /* Wait for last operation to be completed */ - status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); - - if(status == HAL_OK) - { - *(__IO uint8_t*)OPTCR_BYTE1_ADDRESS = Level; - } - - return status; -} - -/** - * @brief Program the FLASH User Option Byte: IWDG_SW / RST_STOP / RST_STDBY. - * @param Iwdg: Selects the IWDG mode - * This parameter can be one of the following values: - * @arg OB_IWDG_SW: Software IWDG selected - * @arg OB_IWDG_HW: Hardware IWDG selected - * @param Stop: Reset event when entering STOP mode. - * This parameter can be one of the following values: - * @arg OB_STOP_NO_RST: No reset generated when entering in STOP - * @arg OB_STOP_RST: Reset generated when entering in STOP - * @param Stdby: Reset event when entering Standby mode. - * This parameter can be one of the following values: - * @arg OB_STDBY_NO_RST: No reset generated when entering in STANDBY - * @arg OB_STDBY_RST: Reset generated when entering in STANDBY - * @retval HAL Status - */ -static HAL_StatusTypeDef FLASH_OB_UserConfig(uint8_t Iwdg, uint8_t Stop, uint8_t Stdby) -{ - uint8_t optiontmp = 0xFF; - HAL_StatusTypeDef status = HAL_OK; - - /* Check the parameters */ - assert_param(IS_OB_IWDG_SOURCE(Iwdg)); - assert_param(IS_OB_STOP_SOURCE(Stop)); - assert_param(IS_OB_STDBY_SOURCE(Stdby)); - - /* Wait for last operation to be completed */ - status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE); - - if(status == HAL_OK) - { - /* Mask OPTLOCK, OPTSTRT, BOR_LEV and BFB2 bits */ - optiontmp = (uint8_t)((*(__IO uint8_t *)OPTCR_BYTE0_ADDRESS) & (uint8_t)0x1F); - - /* Update User Option Byte */ - *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS = Iwdg | (uint8_t)(Stdby | (uint8_t)(Stop | ((uint8_t)optiontmp))); - } - - return status; -} - -/** - * @brief Set the BOR Level. - * @param Level: specifies the Option Bytes BOR Reset Level. - * This parameter can be one of the following values: - * @arg OB_BOR_LEVEL3: Supply voltage ranges from 2.7 to 3.6 V - * @arg OB_BOR_LEVEL2: Supply voltage ranges from 2.4 to 2.7 V - * @arg OB_BOR_LEVEL1: Supply voltage ranges from 2.1 to 2.4 V - * @arg OB_BOR_OFF: Supply voltage ranges from 1.62 to 2.1 V - * @retval HAL Status - */ -static HAL_StatusTypeDef FLASH_OB_BOR_LevelConfig(uint8_t Level) -{ - /* Check the parameters */ - assert_param(IS_OB_BOR_LEVEL(Level)); - - /* Set the BOR Level */ - *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS &= (~FLASH_OPTCR_BOR_LEV); - *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS |= Level; - - return HAL_OK; - -} - -/** - * @brief Return the FLASH User Option Byte value. - * @retval uint8_t FLASH User Option Bytes values: IWDG_SW(Bit0), RST_STOP(Bit1) - * and RST_STDBY(Bit2). - */ -static uint8_t FLASH_OB_GetUser(void) -{ - /* Return the User Option Byte */ - return ((uint8_t)(FLASH->OPTCR & 0xE0)); -} - -/** - * @brief Return the FLASH Write Protection Option Bytes value. - * @retval uint16_t FLASH Write Protection Option Bytes value - */ -static uint16_t FLASH_OB_GetWRP(void) -{ - /* Return the FLASH write protection Register value */ - return (*(__IO uint16_t *)(OPTCR_BYTE2_ADDRESS)); -} - -/** - * @brief Returns the FLASH Read Protection level. - * @retval FLASH ReadOut Protection Status: - * This parameter can be one of the following values: - * @arg OB_RDP_LEVEL_0: No protection - * @arg OB_RDP_LEVEL_1: Read protection of the memory - * @arg OB_RDP_LEVEL_2: Full chip protection - */ -static uint8_t FLASH_OB_GetRDP(void) -{ - uint8_t readstatus = OB_RDP_LEVEL_0; - - if((*(__IO uint8_t*)(OPTCR_BYTE1_ADDRESS) == (uint8_t)OB_RDP_LEVEL_2)) - { - readstatus = OB_RDP_LEVEL_2; - } - else if((*(__IO uint8_t*)(OPTCR_BYTE1_ADDRESS) == (uint8_t)OB_RDP_LEVEL_1)) - { - readstatus = OB_RDP_LEVEL_1; - } - else - { - readstatus = OB_RDP_LEVEL_0; - } - - return readstatus; -} - -/** - * @brief Returns the FLASH BOR level. - * @retval uint8_t The FLASH BOR level: - * - OB_BOR_LEVEL3: Supply voltage ranges from 2.7 to 3.6 V - * - OB_BOR_LEVEL2: Supply voltage ranges from 2.4 to 2.7 V - * - OB_BOR_LEVEL1: Supply voltage ranges from 2.1 to 2.4 V - * - OB_BOR_OFF : Supply voltage ranges from 1.62 to 2.1 V - */ -static uint8_t FLASH_OB_GetBOR(void) -{ - /* Return the FLASH BOR level */ - return (uint8_t)(*(__IO uint8_t *)(OPTCR_BYTE0_ADDRESS) & (uint8_t)0x0C); -} - -/** - * @} - */ - -#endif /* HAL_FLASH_MODULE_ENABLED */ - -/** - * @} - */ - -/** - * @} - */ - -/************************ (C) COPYRIGHT STMicroelectronics *****END OF FILE****/ |